Description
42N/m, 320kHz, 10nm Tip Radius, 100nm-Wide-Spike @ 2µm, 3deg tilt compensation DESCRIPTION
TIP SPECIFICATIONS
CANTILEVER SPECIFICATIONS The FIB3D2-100 has a 100nm wide spike at 2 um from the spike apex. Thespike is tilt-compensated by 3 degrees and the cantilever is uncoated. Focused Ion Beam (FIB) probes consist of an integrated single crystal TESP silicon cantilever and tip that have been machined (or shaped) toobtain the desired high aspect ratio. They have near vertical sidewallsand aspect ratios of more than 10:1. Common applications includesemiconductor devices, 3-D micro-optics, and development of precisionmetrology methods. FIB tips are designed only for TappingMode and forprofiling narrow gaps. FIB tips should not be used in contact mode. Tip Geometry:
High Aspect Ratio Tip Height:
10 – 15 Front Angle:
1 ± 0.5 Back Angle:
1 ± 0.5 Side Angle:
1 ± 0.5 Tip Radius (Nom):
10 Tip Radius (Max):
15 Tip Set Back (Nom):
15 Tip Set Back( RNG):
5 – 25 Tilt Compensation:
3 Cantilever Material:
0.01 – 0.025 Ωcm Antimony (n) doped Si Cantilever Thickness (Nom):
4 Cantilever Thickness (RNG):
3.25 – 4.75 Cantilever Geometry:
Rectangular Cantilevers Number:
1
